InSb面阵探测器铟柱缺陷成因与特征研究
投稿时间:2017-12-17  修订日期:2018-01-19  点此下载全文
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作者单位E-mail
侯治锦 西北工业大学 电子信息学院 changhui090504@126.com 
傅 莉 西北工业大学 电子信息学院  
鲁正雄 中国空空导弹研究院  
司俊杰 中国空空导弹研究院  
王 巍 中国空空导弹研究院  
吕衍秋 中国空空导弹研究院  
基金项目:航空创新基金(2011D01406)
中文摘要:通过基于正性光刻胶的不同像元尺寸铟柱阵列及器件制备,研究InSb面阵探测器铟柱缺陷成因与特征。本文分别研制了像元尺寸为50μm×50μm、30μm×30μm、15μm×15μm的面阵探测器的铟柱阵列,并制备出InSb面阵探测器,利用高倍光学显微镜和焦平面测试系统对制备的芯片表面形貌、器件连通性及性能进行了检测与分析。研究结果表明:当像元尺寸为50μm×50μm时,芯片表面形貌和器件连通性测试结果较好;随着像元尺寸减小,芯片表面会出现铟柱相连或铟柱缺失缺陷,器件连通性测试结果与表面形貌相吻合。铟柱相连缺陷是由光刻剥离时残留铟渣引起的铟相连造成;铟柱缺失缺陷是由光刻时残留光刻胶底膜引起的铟柱缺失造成。器件相连缺陷元的响应电压与正常元基本相同,缺失缺陷元的响应电压基本为0,其周围最相邻探测单元响应电压相比正常元增加了约25%。器件缺陷元的研究结果,对通过优化探测器制作水平提升其性能具有重要参考意义。
中文关键词:面阵探测器  铟柱阵列  铟柱缺陷  缺陷
 
Study on the causes and characteristics of indium bump defects in InSb focal plane array
Abstract:In order to study the causes and characteristics of indium bump defects in infrared focal plane array (IRFPA), indium bump with different pixel sizes were developed using positive photoresist during the fabrication of the InSb IRFPAs. Then the surface topography of chip, the connectivity of detector and the performance of detector were characterized by optical microscopy and FPA test-bench respectively. Results show that the surface of chip and the connectivity of detector with the pixel size of 50μm×50μm were better than that of others. As the pixel size was smaller, the surface topography of the chip appeared the connected or missing defective indium bump. And the test results of the connectivity agreed well with that of the surface topography of the indium bump. The connected defects were due to the surface of the indium bump with connecting caused by the indium residue in the process of lithography and lift-off. The missing defects were due to lack of element indium bump caused by the rudimental positive photoresist in the process of lithography. The response voltage of connected defective elements was basically the same as that of normal elements. The response voltage of missing defective elements was zero, and the response voltage of the most adjacent elements compared to normal elements increased by about 25%. The results of the defective elements are of great reference significance for improving the performance of the FPA detector by optimizing the production level.
keywords:focal plane array  indium bump arrays  indium bump defects  defective
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