(英)fT为350GHz的InAlN/GaN HFET高频器件研究
投稿时间:2017-07-04  修订日期:2017-08-28  点此下载全文
引用本文:
摘要点击次数: 50
全文下载次数: 
作者单位E-mail
付兴昌 东南大学 pasf365@163.com 
吕元杰 专用集成电路国家级重点实验室 yuanjielv@163.com 
张力江 河北半导体研究所  
张彤 东南大学 tzhang@seu.edu.cn 
李献杰 河北半导体研究所  
宋旭波 河北半导体研究所  
张志荣 河北半导体研究所  
房玉龙 专用集成电路国家级重点实验室  
冯志红 专用集成电路国家级重点实验室  
基金项目:国家重点研发计划“纳米科技”重点专项,国家自然科学基金项目(面上项目,重点项目,重大项目)
中文摘要:采用再生长n GaN非合金欧姆接触工艺研制了具有高电流增益截止频率(fT)的InAlN/GaN异质结场效应晶体管(HFETs),器件尺寸得到有效缩小,源漏间距减小至600 nm。通过优化干法刻蚀和n GaN外延工艺,欧姆接触总电阻值达到0.16 Ω.mm,该值为目前金属有机化学气相沉积(MOCVD)方法制备的最低值。采用自对准电子束曝光工艺实现34 nm直栅。器件尺寸的缩小以及欧姆接触的改善,器件电学特性,尤其是射频特性得到大幅提升。器件的开态电阻(Ron)仅为0.41 ??mm,栅压1V下,漏源饱和电流达到2.14 A/mm。此外,器件的电流增益截止频率(fT)达到350 GHz,该值为目前GaN基HFET器件国内报道最高值。
中文关键词:InAlN/GaN  异质结场效应晶体管  电流增益截止频率  非合金欧姆接触工艺  纳米栅
 
High-frequency InAlN/GaN HFET with a fT of 350GHz
Abstract:ScaledInAlN/GaNheterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency(fT) were realized by employingnonalloyed regrown n -GaNOhmic contacts, in which the source-to-drain distance (Lsd) was scaled to 600 nm.By processing optimization of dry etching and n -GaN regrowth, a lowtotal Ohmic resistance of 0.16 Ω.mmis obtained, which is arecorded value regrown by metal organic chemical vapor deposition (MOCVD). A 34-nm rectangular gate was fabricated by self-aligned-gate technology. The electrical characteristics of the devices, especially for the RF characteristics, were improved greatly after the reduction of ohmic resistance and gate length. The fabricated InAlN/GaN HFETs show a low on resistance (Ron) of 0.41 ??mm and a high drain saturation current density of 2.14 A/mm at Vgs = 1 V. Most of all, the device shows a high fT of 350 GHz, which is a recorded result reported for GaN-based HFETs in domestic.
keywords:InAlN/GaN  HFET  current gain cut-off frequency  nonalloyedOhmic contacts  Nano-gate
查看全文  查看/发表评论  下载PDF阅读器

版权所有:《红外与毫米波学报》编辑部