基于薄膜电阻的波导E-T结功率分配/合成器研究
投稿时间:2016-07-07  最后修改时间:2016-09-18  点此下载全文
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作者单位E-mail
王斌 中国电子科技集团公司第54研究所 石家庄 050081 wangbin_cetc54@163.com 
田兵 中国电子科技集团公司第54研究所 石家庄 050081  
汪春霆 中国电子科技集团公司第54研究所 石家庄 050081  
基金项目:国家高技术研究发展计划(863计划)(2015AA015701)
中文摘要:单个器件输出功率不满足系统要求时,功率合成技术是提高系统输出功率的有效方法。本文详细研究了基于薄膜电阻的波导E-T结功率分配/合成器,最终设计了一种新型的基于薄膜电阻的波导E-T结。该结构具有高隔离度、低插入损耗、小体积、宽频带等优点。通过合理设计薄膜电阻的长宽比,尽量增大薄膜电阻的面积,并且采用高导热的氮化铝陶瓷基板作为微带和薄膜电阻的介质基板,提高了基于薄膜电阻的波导E-T结承受的功率。利用三维电磁场仿真软件HFSS对其进行了建模仿真,加工的实物经过测试在25~34GHz插入损耗小于0.2dB,回波损耗优于-15dB,隔离度优于10dB。经对比,实测结果与仿真结果吻合,具有较好的工程应用价值。
中文关键词:Ka频段  功率分配/合成器  波导E-T结  薄膜电阻
 
Research on Power Divider/Combinerof Waveguide E-T Junction Based on Thin Film Resistor
Abstract:Power combining technology is an effective method to improve the output power of the system when the output power of a single device does not meet the requirements of the system. In this paper, a new type of waveguide E-T junction power divider/combiner based on thin film resistor was studied in detail, and a novel waveguide E-T junction based on thin film resistor is designed. The structure has the advantages of high isolation, low insertion loss, small size, wide frequency band and so on. Through reasonable design the length to width ratio of the thin film resistor, try to increase the area of the thin film resistor, and use the aluminum nitride ceramic substrate with high thermal conductivity as the dielectric substrate of the microstrip and thin film resistor to improve the power which the waveguide E-T junction based on thin film resistor can bear. Using 3D electromagnetic simulation software HFSS to simulate the model, and processed the novel waveguide E-T junction based on thin film resistor. After testing, the insertion loss was less than 0.2dB, the return loss was better than -15dB, the isolation is better than 10dB in 25~34GHz. By contrast, the measured results were consistent with the simulation results, so the structure has a good engineering application value.
keywords:Ka-band  power divider/combiner  waveguide E-T junction  thin-film resistor
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