上海大学理学院,上海大学理学院,深圳大学材料学院,中国科学院上海微系统与信息技术研究所,中国科学院上海微系统与信息技术研究所,中国科学院上海微系统与信息技术研究所,上海大学理学院,中国科学院上海微系统与信息技术研究所,深圳大学材料学院,德国于利希研究中心
国家自然科学基金项目（面上项目，重点项目，重大项目）； 信息功能材料国家重点实验室开放项目 ；广东省公众福利建设基金；深圳科学技术发展基金
Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University,Department of Physics, Shanghai University,College of Materials Science and Engineering, Shenzhen University,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Department of Physics, International Center for Quantum and Molecular Structures, and Material Genome Institute, Shanghai University,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,College of Materials Science and Engineering, Shenzhen University,Peter Grünberg Institute 9, JARA-FIT, Forschungszentrum Jülich
刘强,赵清太,蔡剑辉,何佳铸,王翼泽,张栋梁,刘畅,任伟,俞文杰,刘新科.具有86 mV/dec亚阈值摆幅的MoS2/SiO2场效应晶体管[J].红外与毫米波学报,2017,36(5):543~549]. LIU Qiang, ZHAO Qing-Tai, CAI Jian-Hui, HE Jia-Zhu, WANG Yi-Ze, ZHANG Dong-Liang, LIU Chang, REN Wei, YU Wen-Jie, LIU Xin-Ke.86 mV/dec subthreshold swing of back-gated MoS2 FET on SiO2[J]. J. Infrared Millim. Waves,2017,36(5):543~549.]
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