1.陕西科技大学，电子信息与人工智能学院，陕西 西安710016;2.西安交通工程学院，机电工程学院，陕西 西安710300;3.河北科技大学，信息科学与工程学院，河北 石家庄 050018
TN304.2;TN305
1.School of Electronic Information and Artificial Intelligence， Shaanxi University of Science and Technology， Xi’an 710016， China;2.School of Mechanical and Electrical Engineering， Xi’an Traffic Engineering Institute， Xi’an 710300， China;3.School of Information Science and Engineering， Hebei University of Science and Technology， Shijiazhuang 050018， China
This work was supported by the Natural Science Basic Research Program of Shaanxi Province （2023-JC-QN-0758）， Shaanxi University of Science and Technology Research Launch Project （2020BJ-26）. Doctoral Research Initializing Fund of Hebei University of Science and Technology， China （1181476）.
张静,阳智,郑黎明,朱小娟,王萍,杨琳. V/III比对分子束外延生长的GaAs基InAsxSb1-x电子迁移率的影响[J].红外与毫米波学报,2025,44(1):25~32]. ZHANG Jing, YANG Zhi, ZHENG Li-Ming, ZHU Xiao-Juan, WANG Ping, YANG Lin. The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy[J]. J. Infrared Millim. Waves,2025,44(1):25~32.]
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