改进碲镉汞液相外延方法原位生长正组分梯度薄膜材料
作者:
作者单位:

中国科学院上海技术物理研究所, 上海 200083

中图分类号:

TN213

基金项目:

国家自然科学基金国家重大科研仪器研制项目(12227901)


Improved liquid phase epitaxy method for in-situ growth of HgCdTe with positive composition gradient
Author:
Affiliation:

Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Fund Project:

Supported by the National Natural Science Foundation of China (12227901)

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    摘要:

    研究了液相外延生长条件对碲镉汞薄膜材料组分梯度的影响,建立了指导液相外延生长的理论模型。通过改变水平推舟液相外延工艺的汞损失速率,生长出具有正组分梯度的碲镉汞薄膜材料。针对这种特定条件下生长的碲镉汞外延薄膜,通过腐蚀减薄光谱测试与二次离子质谱测试证实了材料具有正组分梯度结构。与传统方法生长的具有负组分梯度的碲镉汞薄膜相比,这种薄膜材料具有相近的表面形貌与红外透射光谱曲线,且具有较高的晶体质量,其X射线衍射双晶摇摆曲线半峰全宽达到28.8 arcsec。

    Abstract:

    The influence of growth conditions of liquid phase epitaxy on the composition gradient of HgCdTe was studied, and the growth model of liquid phase epitaxy (LPE) of HgCdTe was established. HgCdTe with positive composition gradient was grown by slider liquid phase epitaxy by changing the mercury loss rate. The positive composition gradient structure of HgCdTe grown under the growth condition of specific mercury loss was confirmed by corrosion thinning spectrum and secondary ion mass spectrometry (SIMS). The experimental results show that the HgCdTe with positive composition gradient had the similar surface morphology and infrared transmission spectrum curve to the traditional HgCdTe with negative composition gradient. It had high crystal quality, with a full width at half maximum (FWHM) of X-ray diffraction(XRD)double-crystal rocking curve of 28.8 arcsec.

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霍勤,韩红强,张诚,焦翠灵,王仍,毛铖铭,陆液,陈心恬,乔辉,李向阳.改进碲镉汞液相外延方法原位生长正组分梯度薄膜材料[J].红外与毫米波学报,2024,43(3):307~315]. HUO Qin, HAN Hong-Qiang, ZHANG Cheng, JIAO Cui-Ling, WANG Reng, MAO Cheng-Ming, LU Ye, CHEN Xin-Tian, QIAO Hui, LI Xiang-Yang. Improved liquid phase epitaxy method for in-situ growth of HgCdTe with positive composition gradient[J]. J. Infrared Millim. Waves,2024,43(3):307~315.]

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  • 收稿日期:2023-09-11
  • 最后修改日期:2024-04-18
  • 录用日期:2023-10-23
  • 在线发布日期: 2024-04-12
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