InAs/GaSb II类超晶格材料的Si离子注入研究
作者:
作者单位:

1.上海理工大学,上海 200433;2.中国科学院上海技术物理研究所,上海 200083;3.国科大杭州高等研究院 物理与光电工程学院,浙江 杭州 310024

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中图分类号:

O471.4;O474

基金项目:

国家自然科学基金(61904183,61974152,62004205,62104236,62104237,62222412)、国家重点研发计划(2022YFB3606800)、上海市启明星培育项目扬帆专项(21YF1455000、22YF1455800)、中国科学院上海技术物理研究所创新专项基金(CX-399、CX-455)


Si ion implantation study of InAs/GaSb type II superlattice materials
Author:
Affiliation:

1.University of Shanghai for Science and Technology, Shanghai 200433,China;2.Shanghai Institute of Technical Physics, Shanghai 200083,China;3.School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024,China

Fund Project:

Project supported by National Natural Science Foundation of China (NSFC) (61904183,61974152,62004205,62104236,62104237,62222412), National Key Research and Development Program of China (2022YFB3606800), Shanghai Rising-Star Program(Sailing Program 21YF1455000、22YF1455800) and Special Fund for Innovation of SITP, CAS (CX-399, CX-455)

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    摘要:

    II类超晶格红外探测器一般通过台面结实现对红外辐射的探测,而通过离子注入实现横向PN结,一方面材料外延工艺简单,同时可以利用超晶格材料横向扩散长度远高于纵向的优势改善光生载流子的输运,且易于制作高密度平面型阵列。本文利用多种材料表征技术,研究了不同能量的Si离子注入以及退火前后对InAs/GaSb II类超晶格材料性能的影响。研究通过Si离子注入,外延材料由P型变为N型,超晶格材料中产生了垂直方向的拉伸应变,晶格常数变大,且失配度随着注入能量的增大而增大,注入前失配度为-0.012%,当注入能量到200 keV时,失配度达到0.072%,超晶格部分弛豫,弛豫程度为14%,而在300 °C 60 s退火后,超晶格恢复完全应变状态,且晶格常数变小,这种张应变是退火引起的Ga-In相互扩散以及Si替位导致的晶格收缩而造成的。

    Abstract:

    Class II superlattice infrared detectors generally detect infrared radiation through mesa junction, while transverse PN junction is realized through ion implantation. On the one hand, the material epitaxy process is simple, and at the same time, the advantages of superlattice material that the transverse diffusion length is far higher than the longitudinal can be used to improve the transport of photogenerated current carriers, and it is easy to make high-density planar arrays. In this paper, the effects of Si ion implantation with different energies and annealing on the properties of InAs/GaSb type II superlattice materials were studied by using a variety of material characterization techniques. Through Si ion implantation, the epitaxial material changes from P type to N type, and the vertical tensile strain is generated in the superlattice material. The lattice constant becomes larger, and the mismatch increases with the increase of implantation energy. The mismatch before implantation is -0.012%. When the implantation energy reaches 200 keV, the mismatch reaches 0.072%, and the superlattice partially relaxes, with the relaxation degree of 14%. After annealing at 300 ° C for 60 s, the superlattice returns to the fully strained state, and the lattice constant becomes smaller, This tensile strain is caused by the diffusion of Ga-In caused by annealing and lattice shrinkage caused by Si substitution.

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何苗,周易,应翔霄,梁钊铭,黄敏,王志芳,朱艺红,廖科才,王楠,陈建新. InAs/GaSb II类超晶格材料的Si离子注入研究[J].红外与毫米波学报,2024,43(1):15~22]. HE Miao, ZHOU Yi, YING Xiang-Xiao, LIANG Zhao-Min, HUANG Min, WANG Zhi-Fang, ZHU Yi-Hong, LIAO Ke-Cai, WANG Nan, CHEN Jian-Xin. Si ion implantation study of InAs/GaSb type II superlattice materials[J]. J. Infrared Millim. Waves,2024,43(1):15~22.]

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  • 收稿日期:2023-04-21
  • 最后修改日期:2023-11-28
  • 录用日期:2023-06-01
  • 在线发布日期: 2023-11-27
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