基于SnS2/InSe异质结的高性能宽带光电探测器
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1.北京工业大学 微电子学院 光电子技术教育部重点实验室,北京 100124;2.中国科学院 苏州纳米技术与纳米仿生研究所 纳米加工平台,江苏 苏州 215123

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TN214

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High performance and broadband photodetectors based on SnS2/InSe heterojunction
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Affiliation:

1.Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology, Beijing 100124, China;2.Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Fund Project:

This work is supported by the National Natural Science Foundation of China (61574011, 60908012, 61575008, 61775007, 61731019, 61874145, 62074011, 62134008), the Beijing Natural Science Foundation (4182015, 4172011, 4202010) and Beijing Nova Program (Z201100006820096) and International Student related expenses-Department of Information(040000513303).

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    摘要:

    我们报道了一种基于SnS2 / InSe垂直异质结的宽带光电探测器,其光谱范围为365-965 nm。其中,InSe作为光吸收层,有效扩展了光谱范围,SnS2作为传输层,与InSe形成异质结,促进了电子-空穴对的分离,增强了光响应。该光电探测器在 365 nm 下具有813 A/W 的响应度。并且,在965nm光照下它仍然具有371 A/W的高响应度,1.3×105%的外量子效率,3.17×1012 Jones的比探测率,以及27 ms的响应时间。该研究为高响应宽带光电探测器提供了一种新的方法。

    Abstract:

    We reported a broadband photodetector with a spectral range of 365-965 nm, based on a SnS2/InSe vertical heterojunction. In this device, InSe serves as the optical absorption layer, effectively extending the spectral range, while SnS2 functions as the transmission layer, forming a heterojunction with InSe to facilitate separation of electron-hole pairs and enhance the responsivity. The photodetector exhibits a responsivity of 813 A/W under 365 nm. Moreover, it still maintained a high responsivity of 371 A/W, an external quantum efficiency of 1.3 × 105%, a specific detectivity of 3.17 × 1012 Jones, and a response time of 27 ms under 965 nm illumination. The above investigation provides a new approach for broadband photodetectors with high responsivity.

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王冰辉,邢艳辉,贺雯馨,关宝璐,韩军,董晟园,李嘉豪,方佩景,韩梓硕,张宝顺,曾中明.基于SnS2/InSe异质结的高性能宽带光电探测器[J].红外与毫米波学报,2023,42(5):659~665]. WANG Bing-Hui, XING Yan-Hui, HE Wen-Xin, GUAN Bao-Lu, HAN Jun, DONG Sheng-Yuan, LI Jia-Hao, FANG Pei-Jing, HAN Zi-Shuo, ZHANG Bao-Shun, ZENG Zhong-Ming. High performance and broadband photodetectors based on SnS2/InSe heterojunction[J]. J. Infrared Millim. Waves,2023,42(5):659~665.]

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  • 收稿日期:2023-03-03
  • 最后修改日期:2023-08-09
  • 录用日期:2023-04-17
  • 在线发布日期: 2023-08-07
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