In this work， the doping effects of Ti on the structural， linear optical properties and nonlinear absorption of Sb₂Te₃ thin films were systematically studied. A magnetron sputtering system and an annealing furnace are employed to prepare the crystalline Sb₂Te₃ samples with different doping concentrations of Ti. The X-ray photoelectron spectroscopy analysis confirmed that the Ti element exists in the Sb₂Te₃ films is in the form of TiTe₂， in which the chemical state of Ti⁴⁺ arises. For linear optical properties， the results indicate that the Ti dopant can improve the transmittance of the Sb₂Te₃ films， when a wide working wavelength is used in the nonlinear devices. The optical band gap decreases from 1.32 eV to 1.25 eV for the Ti-doped Sb₂Te₃ films， which is dependent on the reduction of carriers according to the Burstein-Moss theory. An open-aperture Z-scan system is set up to determine the nonlinear saturated absorption of the film samples， which is excited by an 800 nm femtosecond laser at a power of 132 GW/cm². Moreover， the adjustable behavior caused by Ti doping could be attributed to the competition between the decrease in the optical band gap and the inhibition of the crystallization. Additionally， it is interesting to ?nd that the Ti doping improves the laser damage threshold of the Sb₂Te₃ thin films from 188.6 to 265.5 GW/cm². In general， the Ti-doped Sb₂Te₃ thin films have wide-ranging application possibilities for the field of nonlinear optical devices.