InyAl1-yAs线性渐变缓冲层对InP基HEMT材料性能的影响
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1.中国科学院上海微系统与信息技术研究所 中科院太赫兹固态技术重点实验室,上海200050;2.中国科学院大学 材料科学与光电子工程中心,北京100049;3.海南师范大学 材料科学与光电工程研究中心,海南 海口571158

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O78

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Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials
Author:
Affiliation:

1.Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3.College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158,China

Fund Project:

Supported by National Natural Science Foundation of China(61434006)

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    摘要:

    采用气体源分子束外延(GSMBE)技术,研究了InP衬底上InyAl1-yAs线性渐变缓冲层对In0.66Ga0.34As/InyAl1-yAs高迁移率晶体管(HEMT)材料特性影响。研究了不同厚度和不同铟含量的InyAl1-yAs线性渐变缓冲层对材料的表面质量、电子迁移率和二维电子气浓度的影响。结果表明,在300 K(77 K)时,电子迁移率和电子浓度分别为8 570 cm2/(Vs)-1(23 200 cm2/(Vs)-1)3.255E12 cm-2(2.732E12 cm-2)。当InyAl1-yAs线性渐变缓冲层厚度为50 nm时,材料的表面形貌得到了很好的改善,均方根粗糙度(RMS)为0.154 nm。本研究可以为HEMT器件性能的提高提供强有力的支持。

    Abstract:

    This paper reports the material characteristics of In0.66Ga0.34As/InyAl1-yAs high electron mobility transistor (HEMT). The linearly graded InyAl1-yAs buffer layer was grown on InP substrates by gas source molecular beam epitaxy (GSMBE). The influence of InyAl1-yAs graded buffer layer with different thickness and different indium contents on the surface quality, the electron mobility and the concentrations of two-dimensional electron gas (2DEG) was studied. It was found that the electron mobility and concentration at 300 K (77 K) were 8570 cm2/(Vs)-1 (23200 cm2/(Vs)-1) and 3.255×1012 cm-2 (2.732×1012 cm-2). The surface morphology of the material was also well improved and the root mean square (RMS) was 0.154 nm when the InAlAs graded buffer layer thickness was 50 nm. And this study can provide strong support for the improvement of HEMT performance.

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田方坤,艾立鹍,孙国玉,徐安怀,黄华,龚谦,齐鸣. InyAl1-yAs线性渐变缓冲层对InP基HEMT材料性能的影响[J].红外与毫米波学报,2022,41(4):726~732]. TIAN Fang-Kun, AI Li-Kun, SUN Guo-Yu, XU An-Huai, HUANG Hua, GONG Qian, QI Ming. Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials[J]. J. Infrared Millim. Waves,2022,41(4):726~732.]

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  • 收稿日期:2021-11-18
  • 最后修改日期:2022-08-11
  • 录用日期:2022-01-10
  • 在线发布日期: 2022-08-10
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