1.中国科学院上海微系统与信息技术研究所 中科院太赫兹固态技术重点实验室,上海200050;2.中国科学院大学 材料科学与光电子工程中心,北京100049;3.海南师范大学 材料科学与光电工程研究中心,海南 海口571158
O78
1.Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;3.College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158,China
Supported by National Natural Science Foundation of China(61434006)
田方坤,艾立鹍,孙国玉,徐安怀,黄华,龚谦,齐鸣. InyAl1-yAs线性渐变缓冲层对InP基HEMT材料性能的影响[J].红外与毫米波学报,2022,41(4):726~732]. TIAN Fang-Kun, AI Li-Kun, SUN Guo-Yu, XU An-Huai, HUANG Hua, GONG Qian, QI Ming. Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials[J]. J. Infrared Millim. Waves,2022,41(4):726~732.]
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