1.中国科学院上海技术物理研究所 传感器技术国家重点实验室，上海200083;2.中国科学院上海技术物理研究所 红外成像材料与器件重点实验室，上海200083;3.中国科学院大学，北京100049
WAN Lu-Hong
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;University of Chinese Academy of Sciences， Beijing 100049， ChinaSHAO Xiu-Mei
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaLI Xue
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaGU Yi
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaMA Ying-Jie
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， ChinaLI Tao
State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China1.State Key Laboratories of Transducer Technology， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;2.Key Laboratory of Infrared Imaging Materials and Detectors， Shanghai Institute of Technical Physics， Chinese Academy of Sciences， Shanghai 200083， China;3.University of Chinese Academy of Sciences， Beijing 100049， China
Supported by National Natural Science Foundation of China （61704180，62175250）
万露红,邵秀梅,李雪,顾溢,马英杰,李淘.基于MIS电容器的Al2O3与In0.74Al0.26As的界面特性[J].红外与毫米波学报,2022,41(2):384~388]. WAN Lu-Hong, SHAO Xiu-Mei, LI Xue, GU Yi, MA Ying-Jie, LI Tao. Interfacial properties between Al2O3 and In0.74Al0.26As epitaxial layer on MIS capacitors[J]. J. Infrared Millim. Waves,2022,41(2):384~388.]
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