利用分子束外延生长高质量应变平衡InAs/InAsSb Ⅱ类超晶格
作者:
作者单位:

1.云南师范大学 能源与环境科学学院,云南 昆明 650092;2.中国科学院半导体研究所 半导体超晶格国家重点实验室,北京100083;3.中国科学技术大学 量子信息与量子科技前沿协同创新中心,安徽 合肥230026;4.华南师范大学 华南先进光电子研究院,广东省光信息材料与技术重点实验室,电子纸显示技术研究所,国家绿色光电子国际联合研究中心,广东 广州 510006

作者简介:

E-mail: ruitinghao@semi.ac.cnwangguowei@semi.ac.cn

通讯作者:

中图分类号:

TN213

基金项目:


High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy
Author:
Affiliation:

1.School of Energy and Environment Science, Yunnan Normal University, Kunming 650092, China;2.State Key Laboratory for SLs and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;3.Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China;4.National Center for International Research on Green Optoelectronics, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China

Fund Project:

Supported by the National Natural Science Foundation of China (61774130, 11474248, 61790581, 51973070), and the Ph.D. Programs Foundation of Ministry of Education of China (20105303120002), National Key Technology Research and Development Program of the Ministry of Science and Technology of China (2018YFA0209101).

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    摘要:

    利用分子束外延技术在GaSb衬底上生长了高质量的InAs/InAsSb(无Ga)Ⅱ类超晶格。超晶格的结构由100个周期组成,每个周期分别是3.8 nm厚的InAs层和1.4 nm厚的InAs0.66Sb0.34层。在实验过程中出现了一种特殊的尖峰状缺陷。利用高分辨率x射线衍射(HRXRD)、原子力显微镜(AFM)和傅里叶变换红外光谱(FTIR)对外延的超晶格进行了表征和分析。结果表明,优化后的样品几乎为零晶格失配,超晶格0级峰半峰宽为39.3 arcsec,表面均方根粗糙度在10 μm×10 μm范围内达到1.72 ?。红外吸收光谱显示50%的截止波长为4.28 μm,PL谱显示InAs/InAs0.66Sb0.34超晶格4.58 μm处有清晰锐利的发光峰。这些结果表明,外延生长的InAs/InAsSb超晶格稳定性和重复性良好,值得进一步的研究。

    Abstract:

    In this paper, high quality InAs/InAsSb(Ga-free) type-II superlattice were grown on GaSb substrates by molecular beam epitaxy. The superlattice layers structure consists of 100 periods with 3.8 nm thick InAs layers and 1.4 nm InAs0.66Sb0.34 layers. A specific spike-like defect was found during experiment. The epitaxial layer was characterized and analyzed by high-resolution x-ray diffraction (HRXRD), atomic force microscope (AFM) and Fourier transform infrared spectroscopy (FTIR). The results show that the optimized sample is almost zero lattice mismatched, the FWHM of the zeroth order SL peak is 39.3 arcsec, the RMS surface roughness achieves around 1.72? over an area of 10 μm×10 μm. The FTIR absorption spectrum shows a 50% cutoff wavelength of 4.28 μm. And PL spectrum shows that the peak of InAs/InAs0.66Sb0.34 SL is at 4.58 μm. These initial results indicate that the grown InAs/InAsSb SL is stable and reproducible, and thus it is worthy of further investigation.

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魏国帅,郝瑞亭,郭杰,马晓乐,李晓明,李勇,常发冉,庄玉,王国伟,徐应强,牛智川,王耀.利用分子束外延生长高质量应变平衡InAs/InAsSb Ⅱ类超晶格[J].红外与毫米波学报,2021,40(5):595~604]. WEI Guo-Shuai, HAO Rui-Ting, GUO Jie, MA Xiao-Le, LI Xiao-Ming, LI Yong, CHANG Fa-Ran, ZHUANG Yu, WANG Guo-Wei, XU Ying-Qiang, NIU Zhi-Chuan, WANG Yao. High quality strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy[J]. J. Infrared Millim. Waves,2021,40(5):595~604.]

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  • 收稿日期:2020-09-12
  • 最后修改日期:2021-09-06
  • 录用日期:2021-03-16
  • 在线发布日期: 2021-09-06
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