应用于40Gb/s电吸收调制器的Al2O3高速热沉研究
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TN36 TN81

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国家自然科学基金(60244001,60223001和60290084)、“863”高技术计划(200lAA312190和2002AA31119Z)和“973”重点国家基础研究(G2000-03-6601)资助项目


HIGH-SPEED Al2O3 -BASED SUBMOUNT FOR 40Gb/s ELECTROABSORPTION MODULATORS
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    摘要:

    设计制作了面向40Gb/s电吸收调制器(EAM)的高速微波过渡热沉,并进行了EAM管芯级封装测试的验证.这种基于氧化铝(Al2O3)的热沉采用共面波导(CPW)传输线以实现低损耗微波传送,以及Ta2N薄膜电阻用于EAM的阻抗匹配,采用Ti/Cu/Ni/Au金属材料作为CPW传输线电极材料,从而保证CPW传输线与Ta2N电阻材料之间良好的电接触,使热沉的典型反射系数在0—40GHz范围内均达到优于-21dB的水平.作为验证,采用该种热沉用于高速EAM的管芯级封装,测试得到小信号调制响应带宽超过40GHz.

    Abstract:

    A high-speed submount was designed and fabricated for 40 Gb/s electroabsorption modulators(EAMs),and characterized in the chip-level packaging and testing of an EAM device.The Al_2O_3-based submount contains a coplanar waveguide(CPW) for microwave signal feeding and a Ta_2N thin-film resistor for impedance matching of EA modulator.Ti/Cu/Ni/Au metal is introduced as the CPW electrode material,and good contact with Ta_2N thin-film is guaranteed accordingly.Therefore,the typical reflection coefficient of the submount is reduced to be lower than-21 dB up to 40 GHz.As a demonstration,a high-speed EA modulator was packaged by using the high-speed submount,and the small-signal modulation bandwidth was measured to be over 40 GHz.

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田建柏 熊兵 王健 蔡鹏飞 孙长征 罗毅.应用于40Gb/s电吸收调制器的Al2O3高速热沉研究[J].红外与毫米波学报,2006,25(2):105~108]. TIAN Jian-Bai, XIONG Bing, WANG Jian, CAI Peng-Fei, SUN Chang-Zheng, LUO Yi. HIGH-SPEED Al2O3 -BASED SUBMOUNT FOR 40Gb/s ELECTROABSORPTION MODULATORS[J]. J. Infrared Millim. Waves,2006,25(2):105~108.]

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  • 收稿日期:2005-03-28
  • 最后修改日期:2005-09-19
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