The photoluminescence spectra of DLPE GaP:N were measused at low temperature. The results show that the PL spectra of the epilayers with high radiative recombination efficiencies are basically composed of sharp lines due to recombination of excitons bound to the N, and NN i traps, whereas the PL spectra of the epilayers with low efficiencies are bell shaped spectra of donor acceptor pair transitions superimposed with the NN i peaks. The epitaxial growth conditions and their influence on the PL spectra were discussed.