非掺杂InP的低温光致发光研究
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TN304.2

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PHOTOLUMINESCENCE INVESTIGATION OF NOMINALLY UNDOPED BULK InP AT LOW TEMPERATURE
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    摘要:

    研究了2K低温下非有意掺杂InP单晶的光致发光谱,对近带边的辐射跃迁进行了仔细分析,报道了InP单晶在大功率光激发时束缚于中性施主的激子跃迁发光相对减弱、而束缚于中性受主的激子跃迁发光相对增强的现象,并探讨了其机制,确认了材料中存在Mg、Zn等残余受主杂质,并计算得到Mg受主的离化能为41.5meV.

    Abstract:

    The results of photoluminescence investigation of nominally undoped bulk InP at 2K are reported in this paper.The emissions near the band-gap are carefully analyzed. It was found that the intensity of the peak due to exciton bound to the neutral donor (D~0, X) decreases while the intensity of the peak due to the exciton bound to the neutral acceptor (A~0, X) increases with increasing excitation power and its mechanism was pro- posed. Mg and Zn were identified as residual acceptor impurities in the material. The ionization energy calculated for Mg acceptor is 41.5 meV.

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沈鸿烈 周祖尧.非掺杂InP的低温光致发光研究[J].红外与毫米波学报,1992,11(5):420~424]. Shen Honglie, Zhou Zuyao, Yang Genqing, Zou Shichang. PHOTOLUMINESCENCE INVESTIGATION OF NOMINALLY UNDOPED BULK InP AT LOW TEMPERATURE[J]. J. Infrared Millim. Waves,1992,11(5):420~424.]

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