Silicon crystals of different oxygen contents have been investigated by means of infrared absorption spectroscopy at 300K and 4.2K. It is seen from the experiments that the absorption band at 1127cm~(-1)at low temperatures (80~4.2K) is due to oxygen absorp- tion.
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马碧兰 朱景兵.硅中氧的FTIR研究[J].红外与毫米波学报,1992,11(4):327~330]. Ma Bilan, Zhu Jinbin, Wu Jiangen Zhang Jichang, Zhou Shoutong, Qu Fengyuan. FTIR STUDY OF OXYGEN IN SILICON[J]. J. Infrared Millim. Waves,1992,11(4):327~330.]
