从理论和实验上分析了HgCdTe光导(PC)及扫积型(SPRITE)器件的瞬态衰退过程,结果表明在高偏置电场下,光导器件的衰退过程近似线性,扫积型器件的衰退过程近似矩形.由衰退过程曲线可以确定过剩载流子的双极迁移率.
The transient decay response of HgCdTe PC and SPRITE detectors have been calculated and observed. The results of theory and experiment are in good agreement. At high bias fields, the decay processes of PC and SPRITE detectors are with ramp and rec- tangular waveforms, respectively. According to the curve of decay process, the excess carri- er ambipolar mobility can be determined.
李言谨 朱龙源. HgCdTe光导及扫积型器件的瞬态响应[J].红外与毫米波学报,1992,11(4):271~276]. Li Yanjin, Zhu Longyuan, Fang Jiaxiong. TRANSIENT RESPONSE OF HgCdTe PC AND SPRITE DETECTORS[J]. J. Infrared Millim. Waves,1992,11(4):271~276.]
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