Deep level defects in undoped semi-insulating GaAs are investigated by photo-luminescence (PL) technique. Several PL emissions related to deep level defects and their behaviors have been observed. The emission band at 0.69eV is due to the well known main mid-gap level EL2 and the 0.77eV PL bands attributable to the transition from the con-duction band to the As_(Ga)donor level. It is suggested that the 1.447eV and 1.32eV PL emis-sions are caused by the double acceptors Ga_(As), with levels 78meV and 203meV above the valence band, respectively.
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翁渝民 刘松. GaAs中缺陷的光致发光研究[J].红外与毫米波学报,1992,11(1):27~36]. Weng Yumin, Liu Song, Zong Xiangfu. PHOTOLUMINESCENCE STUDIES OF DEFECTS IN GaAa[J]. J. Infrared Millim. Waves,1992,11(1):27~36.]
