西安电子科技大学 宽带隙半导体技术国家重点学科实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室,中国科学院半导体研究所，超晶格国家重点实验室,中国科学院半导体研究所，超晶格国家重点实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室
School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices
This work was supported by Advance Research Foundation of China (Grant No. 914xxx803- 051xxx111), National Defense Advance Research project (Grant No.315xxxxx301) and National Defense Innovation Program (Grant No.48xx4).
张静,吕红亮,倪海桥,牛智川,张义门,张玉明. InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触[J].红外与毫米波学报,2018,37(6):679~682]. ZHANG Jing, LYU Hong-Liang, NI Hai-Qiao, NIU Zhi-Chuan, ZHANG Yi-Men, ZHANG Yu-Ming. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J]. J. Infrared Millim. Waves,2018,37(6):679~682.]
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