片上太赫兹天线集成器件LT-GaAs外延转移工艺
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中国科学院西安光学精密机械研究所超快诊断技术重点实验室,西安交通大学,中国科学院大学,中国科学院半导体研究所超晶格国家重点实验室,中国科学院大学,中国科学院半导体研究所固态光电子信息技术实验室,中国科学院半导体研究所超晶格国家重点实验室,中国科学院西安光学精密机械研究所超快诊断技术重点实验室,首都师范大学物理系太赫兹光电子学教育部重点实验室,首都师范大学物理系太赫兹光电子学教育部重点实验室,首都师范大学物理系太赫兹光电子学教育部重点实验室,中国科学院半导体研究所超晶格国家重点实验室

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国家自然科学基金(11204190, 61274125);北京市教育委员会科技计划面上项目(KM201610028005);科技部“国家重大科学仪器设备开发专项”基金资助(2012YQ14005)


Transfer process of LT-GaAs expitaxial films for on-chip terahertz antenna integrated device
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Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics.University of Chinese Academy of Sciences,State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences.University of Chinese Academy of Sciences,Laboratory for Solid State Photoelectric Information Technology, Institute of Semiconductors,State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences,Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology of CAS, Xi’an Institute of Optics and Precision Mechanics,Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University,Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University,Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University,State Key Laboratory for Superlattices, Institute of Semiconductors, Chinese Academy of Sciences

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    摘要:

    提供了一种实现片上太赫兹天线集成器件光电导开关材料低温GaAs(LT-GaAs)外延层的转移工艺,使用HNO3-NH4OH-H2O-C3H8O7·H2O溶液-H2O2-HCl腐蚀体系化学湿法腐蚀分子束外延(MBE)生长的外延材料,Hall测试表明MBE生长的此外延材料电阻率在106Ω·cm量级。剥离半绝缘GaAs(GaAs SISI-GaAs)衬底层与Al0.9Ga0.1As牺牲层得到1.5μm LT-GaAs与环烯烃聚合物(COP)键合的结构。原子力显微镜(AFM)、扫描电子显微镜(SEM)、高倍显微镜形貌表征表明剥离后的结构表面平整光滑,表面粗糙度(RMS)为2.28nm,EDAX能谱仪分析显示该结构中不含Al组分,满足光刻形成光电导开关的要求。

    Abstract:

    A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1.5μm LT-GaAs bounded with COP after lift-off of GaAs SISI-GaAs and Al0.9Ga0.1As. AFM、SEM and high-power microscope indicated that the structure was flat and smooth after lift-off. RMS=2.28nm. EDAX indicated there wasn’t Al in this structure. It can be used to make photoconductive switch.

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郭春妍,徐建星,彭红玲,倪海桥,汪韬,田进寿,牛智川,吴朝新,左剑,张存林.片上太赫兹天线集成器件LT-GaAs外延转移工艺[J].红外与毫米波学报,2017,36(2):220~224]. GUO Chun-Yan, XU Jian-Xing, PENG Hong-Ling, NI Hai-Qiao, WANG Tao, TIAN Jin-Shou, NIU Zhi-Chuan, WU Chao-Xin, ZUO Jian, ZHANG Cun-Lin. Transfer process of LT-GaAs expitaxial films for on-chip terahertz antenna integrated device[J]. J. Infrared Millim. Waves,2017,36(2):220~224.]

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  • 收稿日期:2016-05-30
  • 最后修改日期:2016-09-28
  • 录用日期:2016-06-29
  • 在线发布日期: 2017-04-28
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