The VCSEL devices with high peak power at 980nm and miniaturized laser source were reported. The structure of VCSEL element devices was optimized to eliminate the non-uniform current density distribution within the VCSEL’s active region and therefore to enhance the slope efficiency. The peak power with a value of 62 W was achieved from VCSEL element deivce with 400 μm-diameter-active region. Based on the optimized element devices, VCSEL quasi array sub-mount and miniaturized laser source integrated with pulse generator circuit was demonstrated. Under the driving condition of 30 ns、2 kHz、105 A, the peak power as high as 226W was achieved. The laser pulse width, laser wavelength and the slope efficiency of the laser source were 35 ns, 979.4 nm and 2.15 W/A, respectively.