离子束刻蚀碲镉汞中转型宽度
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中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所,中国科学院上海技术物理研究所

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Conductivity type conversion in ion-beam-milled HgCdTe
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State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science,State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Science

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    摘要:

    用Ar+离子束在p型HgCdTe(碲镉汞)上刻蚀出不同体积的环孔, 利用激光诱导电流方法测试转型后的n区宽度.研究发现, 在相同的刻蚀条件下, n区宽度取决于材料的汞空位浓度和被刻蚀HgCdTe体积.当被刻蚀HgCdTe体积相同时, n区宽度随汞空位浓度的增加呈线性减小;当汞空位浓度一定时, n区宽度随被刻蚀HgCdTe体积的增加呈线性增加.

    Abstract:

    After different loopholes are produced by Ar+ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if volume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged.

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徐国庆,刘向阳,王仍,储开慧,汤亦聃,乔辉,贾嘉,李向阳.离子束刻蚀碲镉汞中转型宽度[J].红外与毫米波学报,2014,33(5):477~481]. XU Guo-Qing, LIU Xiang-Yang, WANG Reng, CHU Kai-Hui, TANG Yi-Dan, QIAO Hui, JIA Jia, LI Xiang-Yang. Conductivity type conversion in ion-beam-milled HgCdTe[J]. J. Infrared Millim. Waves,2014,33(5):477~481.]

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  • 收稿日期:2013-05-27
  • 最后修改日期:2013-06-24
  • 录用日期:2013-06-28
  • 在线发布日期: 2014-11-12
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