The micro/nano-scale Bi3.15Nd0.85Ti3O12/Si-MCP (BNT/Si-MCP) ferroelectric thin film arrays were fabricated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the inner wall of Si-MCP. Bi3.15Nd0.85Ti3O12 thin film supported by Si-MCP were prepared via annealing in oxygen atmosphere at 600℃, 650℃, 700℃ and 750℃, respectively. The ferroelectric properties and microstructures of BNT/Si-MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization (93.8 μC/cm2) and lowest leakage current of the micro/nano-scale BNT/Si-MCP arrays were obtained annealing at 750℃.