GaSb量子点液相外延生长
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中科院上海技术物理研究所红外物理国家重点实验室,中科院上海技术物理研究所红外物理国家重点实验室,中科院上海技术物理研究所红外物理国家重点实验室,中科院上海技术物理研究所红外物理国家重点实验室,中科院上海技术物理研究所红外物理国家重点实验室,中科院上海技术物理研究所红外物理国家重点实验室,中科院上海技术物理研究所红外物理国家重点实验室,中科院上海技术物理研究所红外物理国家重点实验室,英国兰卡斯特大学物理系,英国兰卡斯特大学物理系,英国兰卡斯特大学物理系

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上海市创新专项基金(11DZ1140500),上海技术物理研究所创新专项(Q-ZY-78)


GaSb Quantum Dots growth by Liquid Phase Epitaxy
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National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Physics Department, Lancaster University, Lancaster LA1 4YB, UK,Physics Department, Lancaster University, Lancaster LA1 4YB, UK,Physics Department, Lancaster University, Lancaster LA1 4YB, UK

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    摘要:

    采用改进的快速推舟液相外延技术在GaAs衬底上成功地生长了GaSb量子点材料.通过原子力显微镜观测了不同生长参数下GaSb量子点材料的形貌(形状、尺寸、密度、尺寸分布均匀性等).分析了不同衬底、不同生长源配比、生长源与衬底的不同接触时间等生长条件参数对GaSb量子点生长的影响.研究表明在 GaAs衬底上、富镓生长源配比以及较短的生长源和衬底接触时间下更易获得高质量的GaSb量子点.上述生长条件的摸索和研究对于GaSb量子点器件应用具有重要意义.

    Abstract:

    The results on the growth of GaSb quantum dots (QDs) by liquid phase epitaxy (LPE) were reported. The dot Morphology in term of size, shape, density and uniform was studied by atomic force microscopy (AFM). The effects of growth conditions such as substrate, melt composition, and melt-substrate contact time on the morphology of GaSb QDS were investigated. It was found that it’s easier to get high quality GaSb QDs in condition of GaAs substrate, Ga-rich melt and shorter of contact time.

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胡淑红,邱锋,吕英飞,孙常鸿,王奇伟,郭建华,邓惠勇,戴宁,ZHUANG Qian-Dong, YIN Min, KRIER A. GaSb量子点液相外延生长[J].红外与毫米波学报,2013,32(3):220~224]. HU Shu-Hong, QIU Feng, LV Ying-Fei, SUN Chang-Hong, WANG Qi-Wei, GUO Jian-Hua, DENG Hui-Yong, DAI Ning, ZHUANG Qian-Dong, YIN Min, KRIER A. GaSb Quantum Dots growth by Liquid Phase Epitaxy[J]. J. Infrared Millim. Waves,2013,32(3):220~224.]

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  • 收稿日期:2012-04-25
  • 最后修改日期:2012-05-11
  • 录用日期:2012-05-15
  • 在线发布日期: 2013-06-14
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