W波段InGaAs/InP动态二分频器
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中国科学院微电子研究所,西安电子科技大学微电子学院,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,中国科学院微电子研究所,西安电子科技大学微电子学院,中国科学院微电子研究所

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国家重点基础研究发展计划(973计划)


An InGaAs/InP W-band dynamic frequency divider
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Institute of Microelectronics, Chinese Academy of Sciences,Microelectronics Institute, Xidian University,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Institute of Microelectronics, Chinese Academy of Sciences,Microelectronics Institute, Xidian University,Institute of Microelectronics, Chinese Academy of Sciences

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    摘要:

    采用fT= 214 GHz, fmax= 193 GHz 的InGaAs/InP异质结双极型晶体管工艺,设计了一款基于时钟驱动型反相器的动态二分频器.该分频器工作频段为60~100 GHz,但由于测试系统上限频率的限制,只能测出62~83 GHz的工作范围.在-4.2 V和-5.2 V的单电源直流偏置下该分频器的功耗分别为596.4 mW、1060.8 mW.此分频器的成功制作对于工作在W波段锁相环的构建有较大的意义.

    Abstract:

    An ultra-high-speed 2∶1 dynamic frequency divider based on clocked-inverter was designed and fabricated using our own fT =214 GHz, fmax=193 GHz InGaAs/InP heterojunction bipolar transistor technology. The frequency divider was designed to operate from 60 GHz to 100 GHz. However, it was only demonstrated from 62 GHz to 83 GHz, due to the limitation of the measurement system. The circuit consumed 1060.8 mW with a supply voltage of -5.2 V and 596.4 mW with a reduced supply voltage of -4.2 V. The successful fabrication of the divider was of great importance on building a phase-locked loop operating at W band.

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钟英辉,苏永波,金智,王显泰,曹玉雄,姚鸿飞,宁晓曦,张玉明,刘新宇. W波段InGaAs/InP动态二分频器[J].红外与毫米波学报,2012,31(5):393~398]. ZHONG Ying-Hui, SU Yong-Bo, JIN Zhi, WANG Xian-Tai, CAO Yu-Xiong, YAO Hong-Fei, NING Xiao-Xi, ZHANG Yu-Ming, LIU Xin-Yu. An InGaAs/InP W-band dynamic frequency divider[J]. J. Infrared Millim. Waves,2012,31(5):393~398.]

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  • 收稿日期:2011-06-10
  • 最后修改日期:2011-08-10
  • 录用日期:2011-08-26
  • 在线发布日期: 2012-10-31
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