Ultrahigh vacuum scanning tunneling microscopy（STM） and spectroscopy （STS）were used to characterize Hg1-xCdxTe grown by liquidphase epitaxy (LPE) method. The sample was etched with 3% Brominemethanol in 2.5 minutes. The STM images display submicrometersized pit structures with depths ranging from a few tens to a few hundreds nanometers. The scanning tunneling spectra show a larger apparent gap than the energy band gap of the bulk material due to the tipinduced band bending effect. In contrast, the scanning tunneling spectra of the pits show a finite slope through zero volt, implying the contribution of high density of band gap states which blur out the band gap information.