The microtopography of homoepitaxial and Al-doped thin films grown on InSb (001) substrates and (001) misoriented by 2°(111) B substrates by Molecular Beam Epitaxy (MBE) was studied by Atomic Force Microscopy (AFM). The differences of the growing modes of homoepitaxial films on different substrates were compared. The crosshatch introduced after Al was added into InSb films was observed and its cause was analyzed. The research showed that the use of misoriented substrates was more favorable to the reduction of surface defects of InSb films grown by MBE.