In the mass production of InSb infrared detectors, it is found that the micro-stress in an Au electrode thin-film can result in the performance degradation of InSb devices. Through experimental design, the effect of Au electrode thin-film on the detectivity, sensitivity and reliability of InSb chips is verified. The mechanism and recoverability of the micro-stress in the Au electrode thin film are studied and a way to control and optimize the micro-stress is proposed. The research has laid the theoretical and experimental basis for the improvement of the performance and reliability of infrared detectors in the aspects of process and device structure.