Research on Grinding Process of 3-inch InSb Wafer
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    Abstract:

    With the improvement of the modern photoelectric device technology and the increase of the pixels in a focal plane array device, the total thickness variation (TTV) of wafers in a grinding process is improved because of more and more attention paid to large size wafers. To meet the requirements of large size wafers, their TTV values are reduced in the grinding process. After the TTV values of the wafers obtained under different grinding conditions are analyzed, a reasonable grinding procedure is established.

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CHENG Peng, WANG Zhi-fang, ZHAO Chao, et al. Research on Grinding Process of 3-inch InSb Wafer[J]. Infrared,2013,34(5):35~38

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