A silicon-based HgCdTe p-on-n heterojunction thin film material is reported, focusing on the structural design and growth of the multilayered material. Both n-type and p-type doping of the HgCdTe thin film is achieved using molecular beam epitaxy. The average macro-defect density on the surface of the obtained heterojunction material is approximately 500 cm^-2. Secondary ion mass spectrometer results indicate that both the n-type and p-type layers of the heterojunction material achieved the ideal doping concentrations of 1.02×10¹⁵ cm^-3 and 5.15×10¹⁷ cm^-3, respectively. A mid-wave infrared focal plane array fabricated based on this heterojunction material exhibits excellent optoelectronic performance, with a reverse bias voltage exceeding 800 mV.