InAs/GaSb type-II superlattice long-wave/long-wave dual-color infrared focal plane devices with an array size of 320×256 and a pixel pitch of 30 μm were prepared by dry/wet etching process, respectively. The mesa profile,contact hole profile,voltage-current characteristics,and mid-test performance after interconnecting the readout circuit and sealing dewar were compared. The characteristics of the fabrication of dual-color InAs/GaSb type-II superlattice focal plane devices by dry/wet etching process were summarized. This study has reference significance for the study of InAs/GaSb type-II superlattice focal plane devices.