A novel semiconductor material (InGaNAs) is introduced detailly as well as its trait of growth and advantage in manufacturing the devices such as long wavelength quantum well laser with high characteristic temperature, long wavelength vertical cavity surface emission laser (VCSEL), long wavelength light-pumped vertical external cavity surface emission laser (LP-VECSEL), semiconductor saturable absorption mirror (SESAM) and long wavelength resonant cavity enhance photo detector (RCE-PD).