AlGaAs/GaAs量子阱探测器的吸收光谱研究
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常熟理工学院物理与电子工程学院,常熟理工学院物理与电子工程学院

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Study of Absorption Spectrum of AlGaAs/GaAs Quantum Well Photodetectors
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School of Physics and Electronic Engineering,Changshu Institute of Technology,School of Physics and Electronic Engineering,Changshu Institute of Technology

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    摘要:

    从定态Schrodinger方程出发,研究了不同Al组分和不同温度对宽量子阱红外探测器吸收光谱的影响。当体系的费米能级固定后,发现量子阱基态束缚能随着Al组分增长而变大,且相应的吸收光谱峰值趋于短波。环境温度对AlGaAs/GaAs量子阱红外探测器的响应光谱影响不大。通过理论计算定量给出了AlGaAs/GaAs量子阱红外探测器吸收光谱随量子阱阱宽、Al组分和温度变化的规律。

    Abstract:

    Starting from the Schrodinger equation, the influence of different Al composition and different temperatures on the absorption spectra of wide quantum well infrared photodetectors (QWIP) is studied. It is found that when the Fermi level is fixed, the ground state bound energy of the quantum well may increase with the increasing of the Al composition and the corresponding absorption spectral peak tends to move toward the short wave. In addition, the influence of the ambient temperature on the response spectra of AlGaAs/GaAs QWIPs is negligible. After theoretical calculation, the rule of the absorption spectrum of an AlGaAs/GaAs QWIP changing with quantum well width, Al composition and temperature is given.

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赵昆,杨希峰. AlGaAs/GaAs量子阱探测器的吸收光谱研究[J].红外,2013,34(7):15-19.

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