In the research field of infrared transparent conductive films, alleviating the contradiction between high transmittance and low resistivity is a major scientific challenge. The molecular beam epitaxy (MBE) technique is used to study the effect of growth temperature on the electrical properties of indium-doped cadmium selenide (CdSe:In) films, and a transparent conductive film with a high mobility of 204 cm²·V^-1·s^-1 and a low resistivity of 6.95×10^-5 Ω·m is prepared. The film exhibits a high transmittance of more than 87% in the 1－4 μm waveband. The results of the temperature-dependent characteristics study show that there are three temperature ranges for the conductivity of the film, which are distinguished by the transition of the carrier transportation mechanism. Compared with other reported mid-infrared transparent conductive films, it can be seen that the CdSe:In film shows obvious advantages in carrier mobility and transmittance. This study lays an experimental and theoretical foundation for the application of CdSe:In films in mid-infrared detectors.