The molecular beam epitaxial growth conditions and component adjustment of CdSe_xTe_1-x substrate material for HgCdTe infrared detectors are briefly introduced. Growth conditions include growth structure (mainly CdSe_xTe_1-x/CdTe/ZnTe/Si, CdSe_xTe_1-x/ZnTe/GaAs, etc.), growth temperature (about 300℃), and growth thickness (about 5 μm ), etc. Component adjustment includes analyzing the changes of Se components with (J_Se+J_Te)/J_Cd and J_Se/(J_Se+J_Te). When the J_Se/(J_Se+J_Te) value is small, it is difficult for the Se component to incorporate into the epitaxial layer. When the J_Se/(J_Se+J_Te) value is large, the Se component increases rapidly. At the same time, when the J_Se/(J_Se+J_Te) value is small, the growth trend of the Se component is relatively easy to control. When the value of J_Se/(J_Se+J_Te) is constant, the Se component increases with the decrease of (J_Se+J_Te)/J_Cd. The sudden increase point of Se component change increases with the decrease of (J_Se+J_Te)/J_Cd value. This paper can provide some reference for the preparation of high-performance HgCdTe infrared detectors.