In-doped mercury cadmium telluride (MCT) material was grown using a molecular beam epitaxy (MBE) system. High quality MCT epitaxial wafers with different doping levels were obtained by controlling the In source temperature. The secondary ion mass spectrometer (SIMS) test results show that the concentration of In doping is between 1×10¹⁵ cm^-3 and 2×10¹⁶ cm^-3. The effect of different In doping concentrations on dislocations in the MCT epitaxial layer was characterized. It is found that the dislocation etch pits are mainly triangular in shape, arranged in the direction of <111>. The dislocation density is approximately the same as that of the undoped sample. The electrical properties of the samples were improved after mercury saturation low-temperature treatment for materials with different In doping concentrations. The results confirm that In doping can improve the homogeneity of the material, thereby obtaining a higher electron mobility.