| 非制冷PbSe中红外光导探测器的研究现状与发展趋势 |
| 投稿时间：2024-01-20 修订日期：2024-02-11 点此下载全文 |
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| 基金项目:大连市科技创新基金(2020JJ26GX022)；中央高校基本科研业务费专项资金(DUT19RC(3)032)； |
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| 中文摘要:作为一种窄禁带直接带隙半导体材料,PbSe在室温下即可获得与制冷型光子红外探测材料相近的探测性能,成为未来发展具有SWaP3特征的第四代红外探测器的重要红外材料之一。目前NPG、BAE、NIT等国外红外探测器制造厂商已实现了第二代PbSe红外探测器的小规模商业化生产,并将其应用于导弹制导,夜视增强,制程控制,安防监控等领域。然而,目前PbSe探测器的两种标准制造工艺仍存在技术瓶颈,难以制备出大面积、高性能的PbSe光敏薄膜,导致大面阵、高性能PbSe红外成像系统尚未实现商业化生产。此外对于诱发和提升PbSe薄膜红外探测能力的敏化机制和光电探测机理仍未明确,无法对晶圆级PbSe薄膜的敏化过程提供精确、量化的指导,也极大地限制了PbSe红外探测器的性能进一步的提升。基于PbSe红外探测器的发展历程,归纳与总结了PbSe红外探测器的器件结构、制备工艺、探测机理等方面的研究成果,预测了PbSe红外探测器未来的发展趋势。 |
| 中文关键词:硒化铅 非制冷 红外探测器 敏化过程 |
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| Research status and development trend of uncooled PbSe mid-infrared photo-conductive detectors |
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| Abstract:As a semiconductor material with a narrow, direct bandgap, PbSe offers detection capabilities at room temperature comparable to those of cooled photonic infrared detectors. This makes it a pivotal material for the next generation infrared detectors with SWaP3 characteristics. Companies like NPG, BAE, and NIT have already begun small-scale commercial production of PbSe focal plane array (FPA) detectors, implementing them in areas such as missile guidance, night vision, process control, and security surveillance. However, challenges persist in the manufacturing PbSe FPA detectors, special in fabricating large-area, high-performance PbSe photosensitive films, hindering the commercialization of advanced PbSe infrared imaging systems. Additionally, the mechanisms behind PbSe film sensitization and photodetection remain unclear, limiting precise, quantitative improvements in the manufacturing process and further enhancements in performance. Based on the development of PbSe infrared detectors, this paper consolidates research findings on their device structures, fabrication processes, and detection mechanisms and offers insights into the potential future directions of these critical devices. |
| keywords:PbSe, uncooled, infrared detector, sensitization process |
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