| CdTe/ZnS膜层致密度对于碲镉汞器件性能的影响研究 |
| 投稿时间：2023-11-23 修订日期：2023-11-29 点此下载全文 |
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| 中文摘要:采用CdTe/ZnS双层钝化工艺对长波HgCdTe材料基底进行表面钝化及工艺优化,并采用不同的工艺条件进行了背面增透膜生长。通过对各工艺条件下制备的二极管器件膜层进行SEM、AFM、I-V表征分析,研究了不同工艺条件下沉积的CdTe/ZnS膜层致密度对器件性能的影响。结果表明,致密度更高的CdTe/ZnS钝化膜层均匀,内部无空洞,具有更好的表面状态；更高致密度的背面增透膜层附着力更强,在液氮冲击下具有更好的表现；高致密度膜层表面缺陷少,制备出的LW640-15探测器在795mV时达到反向饱和电流4.8nA,有效像元率99.86%。 |
| 中文关键词:长波碲镉汞 表面钝化 背面增透 致密度 |
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| Study on the Effect of CdTe/ZnS Film Density on the Performance of HgCdTe Devices |
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| Abstract:The CdTe/ZnS double-layer passivation process was used to passivate the surface of long-wave HgCdTe material substrate and optimize the process. Different process conditions were used for the growth of the Back antireflective film. The effect of CdTe/ZnS film density deposited under different process conditions on device performance was studied through SEM, AFM, and I-V characterization analysis of the diode device film prepared under different process conditions. The results show that the CdTe/ZnS passivation film with higher density has a uniform layer, no voids inside, and a better surface state; The Back antireflective film with higher density has stronger adhesion and better performance under liquid nitrogen impact; The high-density film has fewer surface defects, and the LW640-15 detector achieved a reverse saturation current of 4.8nA at 795mV, with an effective pixel rate of 99.86%. |
| keywords:long-wave HgCdTe material Surface passivation Back antireflective film Densification |
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