| 硅基碲镉汞红外探测器表面钝化研究 |
| 投稿时间：2022-11-23 修订日期：2022-11-29 点此下载全文 |
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| 中文摘要:碲镉汞(Hg1-xCdxTe,MCT)材料的表面钝化通常被认为是红外探测器制备中的关键工艺之一。高性能的MCT器件需要稳定且可重复生产的钝化表面和符合器件性能要求的界面。碲镉汞表面钝化一直是一个研究的重点。本文以MCT硅基材料为基础进行分子束外延(Molecular Beam Epitaxy , MBE)原位钝化与磁控溅射常规钝化对比研究,结果发现MBE原位钝化膜层的致密性较好、钝化层表面的缺陷孔洞较小,钝化层与MCT的晶格匹配度较好,器件流片的电流电压(I-V)等特性要优于磁控溅射正常钝化。 |
| 中文关键词:碲化镉、分子束外延、钝化、电流电压特性 |
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| Study on Surface Passivation of Silicon based HgCdTe Infrared Detector |
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| Abstract:The passivation of the surface of the MCT material is regarded as the key process for the preparation of infrared detectors. High performance MCT devices need stable and reproducible passivation surfaces and interfaces that meet the device performance requirements. The surface passivation of HgCdTe has always been a focus of research. In this paper，based materials，a comparative study was carried out on the in situ passivation of MBE and conventional passivation by magnetron sputtering clocking was carried out. The results show that MBE in-situ clocking film has good compactness，small defect holes on the surface of the clocking layer，good lattice matching between the clocking layer and MCT，and the current and voltage（I-V）of the device streamer are superior to the normal magnetron sputtering clocking. |
| keywords:CdTe Molecular Beam Epitaxy Passivation Current voltage characteristics |
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