| 不同像元间距红外探测器的铟柱生长研究 |
| 投稿时间：2022-11-18 修订日期：2022-12-09 点此下载全文 |
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| 中文摘要:本文分析了在红外探测器的铟柱生长工艺中,在不同像元间距的情况下,铟柱光刻孔内部的铟沉积情况和微观结构。 解释了在10μm小像元间距的条件下,铟柱高度较矮的原因。 并给出了像元间距的大小跟剥离后铟柱高度之间的关系。对于10μm及以下更小间距红外探测器的铟柱生长,给出了解决铟柱高度问题的办法,在使用新方法后,铟柱的高度能达到5μm以上。 |
| 中文关键词:红外探测器 铟柱 像元间距 |
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| Indium Bump Evaporation Research on IR Detector of Different Pixel Distance |
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| Abstract:The indium deposition situation and microcosmic structure in the indium bump photoresist hole are analyzed when doing the indium evaporation recipe on the infrared photodetector of different pixel distance in this paper. The reason of the short indium bump on the 10μm pixel distance situation is explained and the relationship between pixel distance and indium bump height after lift-off is given. For the indium evaporation on the infrared photodetector of 10μm pixel distance and below, the methods of solve the problem are given. The indium bump height over 5μm after used the new methods. |
| keywords:infrared detector indium bump pixel distance |
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