| InSb焦平面芯片响应率提升的研究 |
| 投稿时间：2022-11-16 修订日期：2022-11-29 点此下载全文 |
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| 中文摘要:InSb光伏探测器的响应率是评价探测器性能的重要指标之一。探测器的电压信号和响应率成正比。本论文从光敏芯片的角度提出了增大InSb红外探测器信号的方法。通过实验设计,优化了台面湿法刻蚀的方法以及降低了芯片P型层的厚度。优化台面刻蚀方法使得台面面积增加,InSb芯片的I-V电流增大了40%,组件的电压信号值提升了16%。进一步将InSb芯片的P型层厚度降低至0.8 μm ~ 1.2 μm后,InSb芯片的I-V电流增大了67.3%,单元组件的电压信号值提升了40.2%。通过对InSb光敏芯片光生载流子的产生到光电流的转化过程,分析了台面湿法刻蚀以及P型层的厚度对信号的影响机理。该研究对于提升InSb探测器信号,优化探测器性能具有重要的指导意义。 |
| 中文关键词:InSb红外探测器 信号 I-V性能 湿法刻蚀 P-N结 |
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| Research on the Improvement of InSb Focal Plane Responsiveness |
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| Abstract:The response rate of InSb photovoltaic detector is one of the important indicators to evaluate the performance of the detector. The voltage signal of the detector is proportional to the response rate. This paper proposes a method to increase the signal of InSb infrared detector from the perspective of photosensitive chip. Through the experimental design, the wet etching method was optimized and the thickness of the P-type layer was reduced. The optimized etching method increases the pixel area, the I-V current of InSb chip increases by 40%, and the voltage signal value of the module increases by 16%. Further reduce the P-layer thickness of the chip to 0.8m~1.2 μ m. The I-V current of Insb chip increased by 67.3%, and the voltage signal value of unit module increased by 40.2%. Through the conversion process from the generation of carriers to the photocurrent of InSb chip, the mechanism of wet etching on the pixel and the influence of the thickness of the P-type layer on the signal is analyzed. This research has important guiding significance for improving InSb infrared detector signal and optimizing detector performance. |
| keywords:InSb detector voltage voltage-current characteristic wet etching p-n junction |
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