缩小步进投影光刻机在红外碲镉汞芯片工艺中的应用 |
投稿时间:2022-11-14 修订日期:2022-11-20 点此下载全文 |
引用本文: |
摘要点击次数: 64 |
全文下载次数: 0 |
|
|
中文摘要:光刻是制备碲镉汞红外探测器芯片过程中非常关键的工艺。目前绝大部分碲镉汞芯片都是使用接触式光刻技术,但是接触式光刻在曝光面型起伏较大的芯片时工艺均匀性较差,并且掩膜在与芯片接触时容易损伤芯片。本文针对接触式光刻的这些缺点,利用尼康缩小步进投影光刻机开发了碲镉汞芯片步进式投影曝光工艺。对设备的硬件和软件均进行了小幅修改和设置使得其可以适用于碲镉汞芯片。经过调试后,缩小步进投影光刻机在某些面型起伏较大的芯片上取得了更好的曝光效果,光刻图形的一致性得到提升。实验结果表明,缩小步进投影光刻技术能够提高碲镉汞芯片的光刻质量,并一定程度上改善芯片制备工艺。 |
中文关键词:碲镉汞红外探测器,缩小步进投影光刻 |
|
Application of steppers in HgCdTe chip fabrication process |
|
|
Abstract:Photolithography is a crucial process in the fabrication of HgCdTe infrared detectors. At present, most HgCdTe chips are made by using contact lithography technology. However, the uniformity of contact lithography on chips with large surface undulation is not satisfiable, and the mask might damage the chips when contacting with the chips. In this article, a Nikon stepper is developed to conduct the exposure of HgCdTe chips. The software and hardware of the device is modified to make it suitable for HgCdTe chips. The stepper has achieved better exposure uniformity on chips with large surface undulations, and the consistency of lithography patterns has been improved. The experimental results show that the stepper can improve the lithography quality of HgCdTe chips, and improve the chip fabrication process to a certain extent. |
keywords:MCT, infrared detectors, projection lithography |
HTML> 查看/发表评论 下载PDF阅读器 |