| 低损伤、高深宽比II类超晶格材料的台面刻蚀技术研究 |
| 投稿时间：2022-11-07 修订日期：2022-11-18 点此下载全文 |
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| 中文摘要:针对双色单铟柱结构的II类超晶格红外探测器件在台面成型过程中，加工难度大且易于产生损伤影响器件性能的问题，进行了低损伤、高深宽比II类超晶格材料台面刻蚀技术的研究。本研究首先建立一种对损伤判断的评判机制，判断现有工艺刻蚀后材料是否发生反型。进而通过优化光刻胶厚度、变功率分步刻蚀的方式，实现低损伤高深宽比II类超晶格材料台面刻蚀，同时有效解决单次刻蚀深台面易堆积生成物及侧壁过于陡峭等工艺问题。台面中心间距为20μm，刻蚀深度超8μm，缝隙深宽比可达2。该台面后续制备器件具有明显的双阻抗特征，其中长波阻抗峰值达100Mohm，并且IV曲线中长波侧的平坦区超过100mV，从电学角度初步判断探测器具有双色探测的能力，验证了该工艺的可行性。 |
| 中文关键词:二类超晶格 低损伤 刻蚀技术 |
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| Studies on Mesa Etching Technology of Low Damage and High Aspect Ratio Class II Superlattice Material |
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| Abstract:Abstract: In order to solve the problem that would be difficult to fabricate a type II superlattice infrared detector with a dual single indium column structure, and it is easy to cause damage to affect the device performance during the mesa forming process, the mesa etching technology of type II superlattice materials with low damage and high aspect ratio is studied. In this study, a judgment mechanism for damage judgment was first established to judge whether the materials after etching by the existing process had inversion. Moreover, by optimizing the photoresist thickness and etching with variable power step by step, the mesa etching of Class II superlattice materials with low damage and high aspect ratio can be realized, and the process problems such as easy accumulation of fabrication on the single etching deep mesa and steep sidewall can be effectively solved. The distance between centers of mesa is 20μm. Etching depth exceeds 8μm. The gap depth width ratio can reach 2. The subsequent devices of the mesa have obvious dual impedance characteristics, in which the peak value of the long wave impedance reaches 100Mohm, and the flat area of the long wave side in the IV curve exceeds 100mV. From the electrical point of view, it is preliminarily judged that the detector has the capability of dual color detection. The feasibility of the process is verified. |
| keywords:class II superlattice low damage etching technique |
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