| 锑化铟红外探测器的三维电极成型技术 |
| 投稿时间：2022-11-01 修订日期：2022-11-21 点此下载全文 |
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| 中文摘要:锑化铟的电极因其三维特性,易产生侧壁断裂问题,使互联的铟柱侵入电极内部,影响锑化铟芯片的可靠性。本文通过使用离子束溅射沉积、热蒸发、磁控溅射等方法制备三维电极体系,通过聚焦离子束方法和扫描电子显微镜进行表征。研究表明,热蒸发、磁控溅射制备的电极三维覆盖较好,但存在电极脱落和剥离困难的问题；离子束沉积方法可以通过改变沉积角度、移除修正挡板的方法,实现锑化铟三维电极的高质量制备。 |
| 中文关键词:锑化铟 三维电极体系 热蒸发 磁控溅射 离子束溅射沉积 |
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| Three-dimensional electrode forming technology of indium antimonide infrared detector |
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| Abstract:Due to its three-dimensional characteristics, the electrode of InSb infrared detector is prone to the problem of sidewall fracture, which makes the interconnected indium bumps invade the inside of the electrode, which affects the reliability of the InSb detector . In this paper, three-dimensional electrode systems are prepared by ion beam sputter deposition, thermal evaporation and magnetron sputtering.Details are characterized by focused ion beam method and scanning electron microscope. The research shows that the three-dimensional coverage of the electrodes prepared by thermal evaporation and magnetron sputtering is good, but there are problems of electrode peeling ; the ion beam deposition method can achieve high-quality fabrication of three-dimensional electrodes. |
| keywords:InSb Three-dimentional metal electrode Thermal evaporation Magnetron sputtering Ion beam sputter deposition |
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