| InAs/GaSbⅡ类超晶格双色红外焦平面器件的干法刻蚀与湿法腐蚀制备对比研究 |
| 投稿时间：2022-10-31 修订日期：2022-11-14 点此下载全文 |
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| 中文摘要:分别采用干法刻蚀工艺路线及湿法腐蚀工艺路线制备了面阵规模为320×256，像元中心距为30 μm的InAs/GaSbⅡ类超晶格长长波双色红外焦平面器件，并对台面形貌、接触孔形貌、伏安特性及互连读出电路并封杜瓦后的中测性能进行了对比研究，总结了干法工艺及湿法工艺进行双色InAs/GaSbⅡ类超晶格焦平面器件制备的特点，该研究对于InAs/GaSbⅡ类超晶格焦平面器件的研制具有参考意义。 |
| 中文关键词:InAs/GaSb Ⅱ类超晶格 焦平面 双色 |
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| Comparative Study of InAs/GaSb Type-II Superlattice Dual-Color Infrared Focal Plane Array Devices Fabricated by Dry/Wet Etching |
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| Abstract:InAs/GaSb type-Ⅱ superlattice long-/long-wave dual-color infrared focal plane devices (320×256- 30 μm pitch) are fabricated by dry/wet etching process. The mesa profile、contact hole profile、voltage-current characteristics、performance of the devices are analyzed. The characteristics of the fabriation of dual-color InAs/GaSb type-Ⅱ superlattice focal plane devices by dry/wet etching process are summarized. This study has reference significance for the study of InAs/GaSb type Ⅱ superlattice focal plane array devices. |
| keywords:InAs/GaSb Type-Ⅱ superlattice focal plane array dual color |
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