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n型GaN欧姆接触的研究进展
投稿时间:2009-03-18  修订日期:2009-04-02  点此下载全文
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作者单位E-mail
王忆锋 昆明物理研究所 wangyifeng63@qq.com 
中文摘要:III-V族GaN基材料以其在紫外光子探测器、发光二极管、高温及大功率电子器件方面的应用潜能而被广为研究。低阻欧姆接触是提高GaN基器件光电性能的关键。金属/GaN界面间较大的欧姆接触电阻一直是影响器件性能和可靠性的一个问题。对于各种应用来说,需要改进GaN的欧姆接触。通过对有关文献的归纳分析,主要介绍了近年来在改进n-GaN工艺、提高欧姆接触性能等方面的研究进展。
中文关键词:GaN  欧姆接触  紫外光子探测器  发光二极管  高电子迁移率晶体管  异质结场效应晶体管
 
Developments of Ohmic Contacts of n-Type GaN
Abstract:The III–V GaN-based materials are being comprehensively investigated recently for its potential as ultraviolet photodetectors as well as light emitting devices, high temperature and high power electronic devices. Low resistance ohmic contacts are essential for improving the electrical and optical performance of GaN-based devices. The high ohmic contact resistance at metal/GaN interfaces is a continuing problem that has led to poor device performance and reliability. In various applications, improved ohmic contacts to GaN are required. By summering and analyzing of related papers published in recent years, this review focuses on the developments in improved n-GaN processes and the current state-of-the-art in contact performance.
keywords:GaN  ohmic contact  ultraviolet photodetector  light emitting diode  heterostructure field-effect transistor  high electron mobility transistor
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