| 硅基非制冷混合式焦平面探测器阵列研究 |
| 投稿时间：2009-01-15 修订日期：2009-02-11 点此下载全文 |
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| 基金项目:国家重点基础研究发展计划（973计划）,国家教育部优秀青年教师基金 |
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| 中文摘要:摘要：本文报道一种32×48元高灵敏非制冷混合式焦平面探测器厚膜阵列。提出了一种硅基微机械加工电容式红外探测器像元结构，采用搀杂钛酸锶钡厚膜作为敏感材料，对其工作原理，器件性能优化设计与制作工艺流程进行了分析，得出优化的结构参数。分析了影响器件性能的关键因素，给出器件所采用的铁电材料的基本物理和电学特性参数，器件的热隔离技术和相应参数。本结构的像元电容值增量比相同敏感面体材料红外探测器接近，减小了像元与衬底电极引线的寄生电容。这种结构的红外探测器阵列对电路的精度要求低，便于研制出集成电路。该红外探测器阵列结构设计思路，符合大阵列红外焦平面像元结构设计发展趋势，为开展非制冷红外焦平面阵列探测器研究奠定了基础。 |
| 中文关键词:非制冷 红外 搀杂钛酸锶钡 厚膜 焦平面探测器 |
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| Study on array of silicon-based uncooled hybrid focal plane detector |
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| Abstract:Abstract: A thick film array of high sensitive UFPA detector, with 32×48 units, is described in this paper. A silicon-based micromachining capacitive pixel structure of infrared detector is provided, with the doped (Ba, Sr） TiO3 (BST） thick film as sensitive material. The operation principle of pixel structure, optimum design of detector performance and fabrication process is analyzed, and then the optimal structure parameters are obtained. The key factors that affect the detector performance are described, and the basic physical and electrical parameters of ferroelectric materials that the detector needs are given. In addition, the heat insulation technique and the corresponding parameters are provided. The capacitance increment of pixel for this structure is approximately equal to that of infrared detector with equivalent sensitive area, and then the parasitic capacitance between the pixel and substrate electrode lead is reduced. It is easy to design the integrated circuit because the infrared detector with this structure needs only low precision for the circuit. This design idea for array structure of infrared matches the development trend of structure design of infrared focal plane pixel with large array, which paves the way to develop new UFPA detector. |
| keywords:Uncoolded Infrared doped (Ba, Sr）TiO3 (BST） Thick films Focal plane detector |
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