碲锌镉晶体表面磨抛方法研究 |
投稿时间:2018-10-18 修订日期:2018-11-07 点此下载全文 |
引用本文:程雨,李春领,肖钰.碲锌镉晶体表面磨抛方法研究[J].红外,2018,39(11):11~16 |
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中文摘要:碲锌镉是一种性能优异的Ⅱ-Ⅵ族化合物半导体材料。随锌含量不同,其禁带宽度可连续调节,是用于制备红外探测器的碲镉汞材料的优良衬底。介绍了多种碲锌镉晶体的磨抛方法,包括手工研磨、机械抛光、化学抛光和机械化学抛光。借助多种表征技术和改良手段,碲锌镉晶体的表面加工取得了显著进步。 |
中文关键词:碲锌镉 磨抛 机械化学抛光 精密加工 |
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Study of Surface Lapping and Polishing Methods of Cadmium Zinc Telluride |
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Abstract:Cadmium Zinc Telluride (CZT) is a II-VI compound semiconductor material with excellent performance. Its energy gap can be tuned continuously with different zinc content. So it is an excellent substrate material for the HgCdTe material to be used to manufacture infrared detectors. Several lapping and polishing methods of cadmium zinc telluride including hand lapping, mechanical polishing, chemical polishing, mechanochemical polishing are presented. With the aid of various characterization techniques and reformed methods, significant progresses have been made in the surface processing of CZT. |
keywords:cadmium zinc telluride lapping and polishing chemical mechanical polishing precision finishing |
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