| 红外半导体材料SIMS分析研究 |
| 投稿时间：2018-09-13 修订日期：2018-09-26 点此下载全文 |
| 引用本文：李乾,折伟林,周朋,李达.红外半导体材料SIMS分析研究[J].红外,2018,39(11):17~20 |
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| 中文摘要:介绍了二次离子质谱仪(Secondary Ion Mass Spectrometer, SIMS)的基本原理及其在焦平面红外半导体材料和器件制备工艺中发挥的重要作用。通过对掺砷碲镉汞和CdTe/InSb材料进行SIMS测试，研究了不同离子源和一次束流大小对测试结果的影响，为后续SIMS分析技术在红外探测器材料的进一步研究奠定了基础。 |
| 中文关键词:二次离子质谱仪 碲镉汞 红外焦平面 |
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| Study of SIMS of Infrared Semiconductor Materials |
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| Abstract:The principle of Secondary Ion Mass Spectrometry (SIMS) and its importance in the manufacture of infrared semiconductor materials and Infrared Focal Plane Array (IRFPA) devices are presented. Through SIMS tests of As:doped HgCdTe and CdTe/InSb materials, the influences of different ion sources and primary beam intensity on test results are studied. The study lays a foundation for the further study of application of SIMS in infrared detector materials. |
| keywords:secondary ion mass spectrometry HgCdTe IRFPA |
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