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分子束外延InSb薄膜材料的表面微观形貌研究
投稿时间:2016-11-15  最后修改时间:2016-11-29  点此下载全文
引用本文:周朋,刘铭.分子束外延InSb薄膜材料的表面微观形貌研究[J].红外,2017,38(2):7~10
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作者单位E-mail
周朋 华北光电技术研究所 zhoupeng8@foxmail.com 
刘铭 华北光电技术研究所 zhoupeng8@foxmail.com 
中文摘要:用原子力显微镜等方法研究了在InSb (001)衬底和(001)偏(111)B面2°衬底上分子束外延生长的同质外延薄膜和掺Al薄膜样品表面的微观形貌。对比了不同衬底同质外延时生长模式的差异,并观察了加入Al后引入的交叉影线,分析了其产生的原因。研究表明,使用有偏角的衬底更有利于减少分子束外延薄膜的表面缺陷。
中文关键词:InSb薄膜材料  原子力显微镜  微观形貌  衬底偏角
 
Study of Microtopography of InSb Film Grown by Molecular Beam Epitaxy
Abstract:The microtopography of homoepitaxial and Al-doped thin films grown on InSb (001) substrates and (001) misoriented by 2°(111) B substrates by Molecular Beam Epitaxy (MBE) was studied by Atomic Force Microscopy (AFM). The differences of the growing modes of homoepitaxial films on different substrates were compared. The crosshatch introduced after Al was added into InSb films was observed and its cause was analyzed. The research showed that the use of misoriented substrates was more favorable to the reduction of surface defects of InSb films grown by MBE.
keywords:InSb film  AFM  micro topography  misoriented substrate
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